Insulated gate type field effect semiconductor device and a circ

Details Insulated gate type field effect semiconductor device and a circ Insulated gate type field effect semiconductor device and a circ

1978-03-01

1986-07-08

Larkins, William D.

Amplifiers

With semiconductor amplifying device

Including push-pull amplifier

357 238, 357 42, 357 51, 307304, H01L 2978, H03F 318, H03F 316

Patent

active

045995761

ABSTRACT:
An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed.

REFERENCES:
patent: 3440500 (1969-04-01), Coppen
patent: 4005450 (1977-01-01), Yoshida et al.
patent: 4021751 (1977-05-01), Suzuki
patent: 4057764 (1977-11-01), Yokoyama
patent: 4058822 (1977-11-01), Awane et al.
patent: 4079504 (1978-03-01), Kosa
patent: 4092661 (1978-05-01), Watrous, Jr.
patent: 4154626 (1979-05-01), Joy et al.
patent: 4172260 (1979-10-01), Okabe et al.
RCA COS/MOS Integrated Circuits Manual (RCA, Somerville, N.J., 1971, Tech. Series CMS-270), pp. 24-26 (exr's personal copy).

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