Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Inventor
active
High resistivity silicon carbide substrates for high power micro
Indium doped gallium arsenide crystals and method of preparation
Method for epitaxially growing .alpha.-silicon carbide on a-axis
Minimizing degradation of SiC bipolar semiconductor devices
Minimizing degradation of SiC bipolar semiconductor devices
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