Method for epitaxially growing .alpha.-silicon carbide on a-axis

Details Method for epitaxially growing .alpha.-silicon carbide on a-axis Method for epitaxially growing .alpha.-silicon carbide on a-axis

1993-10-18

1996-03-26

Wilczewski, Mary

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117101, 117951, 437100, 148DIG148, C30B 2520, H01L 21205

Patent

active

055011730

ABSTRACT:
A method for epitaxially growing a-axis .alpha.-SiC on an a-axis substrate is provided. A section is formed from the SiC crystal by making a pair of parallel cuts in the crystal. Each of these cuts is parallel to the c-axis of the crystal. The resulting section formed from the crystal has opposing a-face surfaces parallel to the c-axis of the crystal. A gas mixture having hydrocarbon and silane is passed over one of the a-face surfaces of the section. The hydrocarbon and silane react on this a-face surface to form an epitaxial layer of SiC. Preferably, the SiC is grown at a temperature of approximately 1450.degree. C.

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