Minimizing degradation of SiC bipolar semiconductor devices

Details Minimizing degradation of SiC bipolar semiconductor devices Minimizing degradation of SiC bipolar semiconductor devices

2008-09-23

2008-09-23

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S105000

Reexamination Certificate

active

11560575

ABSTRACT:
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.

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