Minimizing degradation of SiC bipolar semiconductor devices

Details Minimizing degradation of SiC bipolar semiconductor devices Minimizing degradation of SiC bipolar semiconductor devices

2005-02-01

2005-02-01

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

Reexamination Certificate

active

06849874

ABSTRACT:
A bipolar device has at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

REFERENCES:
patent: 3988762 (1976-10-01), Cline et al.
patent: 3988771 (1976-10-01), Krishna
patent: 3988772 (1976-10-01), Krishna
patent: 4912063 (1990-03-01), Davis et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 5093576 (1992-03-01), Edmond et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5329141 (1994-07-01), Suzuki et al.
patent: 5814546 (1998-09-01), Hermansson
patent: 6054706 (2000-04-01), Razeghi
patent: 6100111 (2000-08-01), Konstantinov
patent: 6338629 (1994-12-01), None
Philip G. Neudeck et al., 2000 V 6H-SiC p-n junction diodes grown by chemical vapor deposition, Applied Physics Letters, Mar. 14, 1994, pp. 1386-1388, vol. 64, No. 11, American Institute of Physics, New York, US.
Sei-Hyung Ryu et al.,1800 V NPN Bipolar Junction Transistors in 4H-SiC, IEEE Electron Device Letters, Mar. 2001, pp. 124-126, vol. 22, No. 3, IEEE Inc., New York, US.
Sei-Hyung Ryu et al.,3100 V, Asymmetrical, Gate Turn-Off(GTO)Thyristors in 4H-SiC, IEEE Electron Device Letters, Mar. 2001, pp. 127-129, vol. 22, No. 3, IEEE Inc, New York, US.
J.W. Palmour et al.,Silicon Carbide for Power Devices, Power Semiconductor Devices and IC's, IEEE International Symposium on Weimar, Germany, May 26-29, 1997, pp. 25-32, IEEE, New York, US.
J.P. Bergman et al.,Defects in 4H silicon carbide, 21stInternational Conference on Defects in Semiconductors, Giessen, Germany, Jul. 16-20, 2001, Physica B, Dec. 2001, pp. 675-679, vol. 308-310, Elsevier, Netherdlands.

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