4. Static information storage and retrieval
  5. Floating gate
  6. Particular connection

Hsiang-Lan Lung

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2T2R-1T1R mix mode phase change memory array

Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate

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3D polysilicon ROM and method of fabrication thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Anti-fuse one-time-programmable nonvolatile memory

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate

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Chalcogenide memory device with multiple bits per cell

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Chalcogenide memory having a small active region

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2045710

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