Chalcogenide memory having a small active region

Details Chalcogenide memory having a small active region Chalcogenide memory having a small active region

2007-04-10

2007-04-10

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE31029

Reexamination Certificate

active

11001424

ABSTRACT:
A chalcogenide phase change memory cell has a substrate with a conductor line. The conductor line has a contact end. An insulating layer is located over the substrate and conductor line. An aperture is located in the insulating layer. The aperture extends to the substrate. A memory material is conformally located within the aperture. The memory material is in electrical contact with the contact end. A conductive layer is located over the memory material in the aperture.

REFERENCES:
patent: 6031287 (2000-02-01), Harshfield
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6781145 (2004-08-01), Doan et al.
patent: 6795338 (2004-09-01), Parkinson et al.

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