4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. Including change in a growth-influencing parameter

Godfrey Augustine

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Advanced physical vapor transport method and apparatus for growi

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent

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Method and apparatus for growing high purity single crystal sili

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent

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Method for integrating silicon CMOS and AlGaN/GaN wideband...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Method for integrating silicon CMOS and AlGaN/GaN wideband...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Method of growing 4H silicon carbide crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent

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