Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1998-07-10
2000-05-02
Powell, William
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 84, 117 88, 117951, C30B 3500, C30B 2300
Patent
active
060568208
ABSTRACT:
Pure silicon feedstock is melted and vaporized in a physical vapor transport furnace. In one embodiment the vaporized silicon 46 is reacted with a high purity carbon member 74, such as a porous carbon disc, disposed directly above the silicon. The gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal 50 axially located above the disc, resulting in the growth of monocrystalline silicon carbide 56. In another embodiment, one or more gases, which may include a carbon-containing gas, are additionally introduced at 84 into the furnace, such as into a reaction zone above the disc, to participate in the growth process.
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patent: Re34861 (1995-02-01), Davis et al.
patent: 5895526 (1999-04-01), Kitoh et al.
patent: 5964944 (1999-10-01), Sugiyama et al.
patent: 5985024 (1999-11-01), Balakrishna et al.
R.W. Brander "Epitaxial Growth of Silicon Carbide" Jul. 1964 pp. 881-883 J. Electrochemical Soc.
Augustine Godfrey
Balakrishna Vijay
Gaida Walter E.
Hopkins Richard H.
Thomas R. Noel
Champagne Donald L.
Northrop Grumman Corporation
Powell William
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