Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-01-06
2008-09-02
Toledo, Fernando L (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S201000, C438S172000, C438S606000
Reexamination Certificate
active
07420226
ABSTRACT:
High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.
REFERENCES:
patent: 6194290 (2001-02-01), Kub et al.
patent: 6242324 (2001-06-01), Kub et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6462360 (2002-10-01), Higgins et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6531740 (2003-03-01), Bosco et al.
patent: 6646293 (2003-11-01), Emrick et al.
patent: 6784466 (2004-08-01), Chu et al.
patent: 6914273 (2005-07-01), Ren et al.
patent: 7012274 (2006-03-01), Taylor
patent: 2002/0031877 (2002-03-01), Arai
patent: 2003/0013284 (2003-01-01), Emrick et al.
patent: 2003/0015730 (2003-01-01), Bosco et al.
patent: 2003/0034506 (2003-02-01), Pandya et al.
patent: 2003/0129780 (2003-07-01), Auberton-Herve
patent: 2004/0084720 (2004-05-01), Esser et al.
patent: 2007/0138506 (2007-06-01), Braddock
patent: WO-01/06546 (2001-01-01), None
“Sensors and Actuators A”, J. Du et al., 112 (2004), pp. 116-121.
“J. Electronic Materials”, G. Kipshidze et al, vol. 30, No. 7 (2001) p. 825.
“Semiconductor Manufacturing Technology”, Prentice Hall (2001), Chapter 12: Metallization.
“Single Crystal SiC MEMS Fabrication Technology Using Smart-Cut Process for Harsh Environment Application”, EECS Department, Case Western Reserve University, 5 pages.
Augustine Godfrey
Hartman Jeffrey D.
Knight Thomas
Partlow Deborah
Turley Alfred Paul
Andrews & Kurth LLP
Northrop Grumman Corporation
Toledo Fernando L
LandOfFree
Method for integrating silicon CMOS and AlGaN/GaN wideband... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for integrating silicon CMOS and AlGaN/GaN wideband..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for integrating silicon CMOS and AlGaN/GaN wideband... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3970579