Method for integrating silicon CMOS and AlGaN/GaN wideband...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257S201000, C438S172000, C438S606000

Reexamination Certificate

active

11326443

ABSTRACT:
High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.

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