Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-09-02
2008-09-02
Toledo, Fernando L (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S201000, C438S172000, C438S606000
Reexamination Certificate
active
11326443
ABSTRACT:
High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.
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Augustine Godfrey
Hartman Jeffrey D.
Knight Thomas
Partlow Deborah
Turley Alfred Paul
Andrews & Kurth LLP
Northrop Grumman Corporation
Toledo Fernando L
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