Method of growing 4H silicon carbide crystal

Details Method of growing 4H silicon carbide crystal Method of growing 4H silicon carbide crystal

1997-05-05

1999-02-23

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117 88, 117104, H01L 21100

Patent

active

058739378

ABSTRACT:
A method of growing 4-H polytype silicon carbide crystals in a physical vapor transport system where the surface temperature of the crystal is maintained at less than about 2160.degree. C. and the pressure inside the PVT system is decreased to compensate for the lower growth temperature.

REFERENCES:
patent: Re34861 (1995-02-01), Davis
Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction, "Nippon Steel Corp".
Influence of surface energy on the growth of 6H and 4H-SiC polytypes by sublimation"Siemens Research Labs".
Control of polytype formation by surface energy effects during the growth of SiC monocrystals by the sublimation method "Siemens Reserch Labs".

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