Gap-fill depositions in the formation of silicon containing...

Details Gap-fill depositions in the formation of silicon containing... Gap-fill depositions in the formation of silicon containing...

2004-12-20

2008-11-25

Richards, N Drew (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S789000, C438S790000, C257SE21273, C257SE21279

Reexamination Certificate

active

07456116

ABSTRACT:
A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

REFERENCES:
patent: 2861009 (1958-11-01), Rubner
patent: 2889704 (1959-08-01), Pekarek
patent: 3046177 (1962-07-01), Hankins
patent: 3048888 (1962-08-01), Shockley et al.
patent: 3109703 (1963-11-01), Politzer et al.
patent: 3142714 (1964-07-01), Politzer et al.
patent: 3166454 (1965-01-01), Voelker
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4590042 (1986-05-01), Drage
patent: 4732761 (1988-03-01), Machida et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4962063 (1990-10-01), Maydan et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5124014 (1992-06-01), Foo et al.
patent: 5204288 (1993-04-01), Marks et al.
patent: 5244841 (1993-09-01), Marks et al.
patent: 5264040 (1993-11-01), Geyling et al.
patent: 5314845 (1994-05-01), Lee et al.
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5439524 (1995-08-01), Cain et al.
patent: 5474955 (1995-12-01), Thakur
patent: 5492858 (1996-02-01), Bose et al.
patent: 5567267 (1996-10-01), Kazama et al.
patent: 5589002 (1996-12-01), Su
patent: 5597439 (1997-01-01), Salzman
patent: 5660472 (1997-08-01), Peuse et al.
patent: 5710079 (1998-01-01), Sukharev
patent: 5728223 (1998-03-01), Murakami et al.
patent: 5728260 (1998-03-01), Brown et al.
patent: 5789322 (1998-08-01), Brown et al.
patent: 5807785 (1998-09-01), Ravi
patent: 5812403 (1998-09-01), Fong et al.
patent: 5840631 (1998-11-01), Kubo et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 5965203 (1999-10-01), Gabric et al.
patent: 5976261 (1999-11-01), Moslehi et al.
patent: 5980686 (1999-11-01), Goto
patent: 6001175 (1999-12-01), Maruyama et al.
patent: 6013584 (2000-01-01), M'Saad
patent: 6024799 (2000-02-01), Chen et al.
patent: 6043136 (2000-03-01), Jang et al.
patent: 6050506 (2000-04-01), Guo et al.
patent: 6079353 (2000-06-01), Leksell et al.
patent: 6079356 (2000-06-01), Umotoy et al.
patent: 6099647 (2000-08-01), Yieh et al.
patent: 6106663 (2000-08-01), Kuthi et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6133160 (2000-10-01), Komiyama et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6140242 (2000-10-01), Oh et al.
patent: 6149987 (2000-11-01), Perng et al.
patent: 6150209 (2000-11-01), Sun et al.
patent: 6150286 (2000-11-01), Sun et al.
patent: 6156114 (2000-12-01), Bell et al.
patent: 6171901 (2001-01-01), Blair et al.
patent: 6184155 (2001-02-01), Yu et al.
patent: 6190973 (2001-02-01), Berg et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6197705 (2001-03-01), Vassiliev
patent: 6203863 (2001-03-01), Liu et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6218268 (2001-04-01), Xia et al.
patent: 6232580 (2001-05-01), Sandhu
patent: 6236105 (2001-05-01), Kariya
patent: 6239002 (2001-05-01), Jang et al.
patent: 6245192 (2001-06-01), Lenz et al.
patent: 6245689 (2001-06-01), Hao et al.
patent: 6248397 (2001-06-01), Ye
patent: 6248628 (2001-06-01), Halliyal et al.
patent: 6267074 (2001-07-01), Okumura
patent: 6276072 (2001-08-01), Morad et al.
patent: 6302965 (2001-10-01), Umotoy et al.
patent: 6319849 (2001-11-01), Oda et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 6337256 (2002-01-01), Shim
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6348421 (2002-02-01), Shu et al.
patent: 6436193 (2002-08-01), Kasai et al.
patent: 6444039 (2002-09-01), Nguyen et al.
patent: 6454860 (2002-09-01), Metzner et al.
patent: 6468853 (2002-10-01), Balasubramanian et al.
patent: 6475284 (2002-11-01), Moore et al.
patent: 6479405 (2002-11-01), Lee et al.
patent: 6489254 (2002-12-01), Kelkar et al.
patent: 6500771 (2002-12-01), Vassilev et al.
patent: 6512264 (2003-01-01), Ogie, Jr. et al.
patent: 6527910 (2003-03-01), Rossman
patent: 6541367 (2003-04-01), Mandal
patent: 6541401 (2003-04-01), Herner et al.
patent: 6565661 (2003-05-01), Nguyen et al.
patent: 6583069 (2003-06-01), Vassiliev et al.
patent: 6586886 (2003-07-01), Katz et al.
patent: 6602792 (2003-08-01), Hsu
patent: 6617259 (2003-09-01), Jung et al.
patent: 6624091 (2003-09-01), Yuan
patent: 6677712 (2004-01-01), Katz et al.
patent: 6713127 (2004-03-01), Subramony et al.
patent: 6733955 (2004-05-01), Geiger et al.
patent: 6734115 (2004-05-01), Cheung et al.
patent: 6740601 (2004-05-01), Tan et al.
patent: 6793733 (2004-09-01), Janakiraman et al.
patent: 6830624 (2004-12-01), Janakiraman et al.
patent: 6875558 (2005-04-01), Gaillard et al.
patent: 6905940 (2005-06-01), Ingle et al.
patent: 6943091 (2005-09-01), Yu et al.
patent: 6946358 (2005-09-01), Doris et al.
patent: 6949447 (2005-09-01), Ahn et al.
patent: 7037859 (2006-05-01), Ingle et al.
patent: 7141483 (2006-11-01), Yuan et al.
patent: 7208425 (2007-04-01), Ingle et al.
patent: 7335609 (2008-02-01), Ingle et al.
patent: 2001/0019860 (2001-09-01), Adachi et al.
patent: 2002/0000195 (2002-01-01), Bang et al.
patent: 2002/0000196 (2002-01-01), Park
patent: 2002/0004282 (2002-01-01), Hong
patent: 2002/0006729 (2002-01-01), Geiger et al.
patent: 2002/0007790 (2002-01-01), Park
patent: 2002/0011215 (2002-01-01), Tel et al.
patent: 2002/0050605 (2002-05-01), Jenq
patent: 2002/0052128 (2002-05-01), Yu et al.
patent: 2002/0102358 (2002-08-01), Das et al.
patent: 2002/0168840 (2002-11-01), Hong et al.
patent: 2002/0192370 (2002-12-01), Metzner et al.
patent: 2003/0019428 (2003-01-01), Ku et al.
patent: 2003/0022523 (2003-01-01), Irino et al.
patent: 2003/0054670 (2003-03-01), Wang et al.
patent: 2003/0057432 (2003-03-01), Gardner et al.
patent: 2003/0071304 (2003-04-01), Ogie, Jr. et al.
patent: 2003/0073290 (2003-04-01), Ramkumar et al.
patent: 2003/0089314 (2003-05-01), Matsuki et al.
patent: 2003/0104677 (2003-06-01), Park et al.
patent: 2003/0111961 (2003-06-01), Katz et al.
patent: 2003/0138562 (2003-07-01), Subramony et al.
patent: 2003/0140851 (2003-07-01), Janakiraman et al.
patent: 2003/0168006 (2003-09-01), Williams
patent: 2003/0201723 (2003-10-01), Katz et al.
patent: 2003/0207530 (2003-11-01), Yu et al.
patent: 2003/0209323 (2003-11-01), Yokogaki
patent: 2004/0003873 (2004-01-01), Chen et al.
patent: 2004/0018699 (2004-01-01), Boyd et al.
patent: 2004/0060514 (2004-04-01), Janakiraman et al.
patent: 2004/0083964 (2004-05-01), Ingle et al..
patent: 2004/0161903 (2004-08-01), Yuan et al.
patent: 2004/0200499 (2004-10-01), Harvey et al.
patent: 2004/0216844 (2004-11-01), Janakiraman et al.
patent: 2004/0224537 (2004-11-01), Lee et al.
patent: 2005/0064730 (2005-03-01), Ingle et al.
patent: 2005/0186755 (2005-08-01), Smythe et al.
patent: 2006/0030165 (2006-02-01), Ingle et al.
patent: 2006/0046427 (2006-03-01), Ingle et al.
patent: 2006/0148273 (2006-07-01), Ingle et al.
patent: 479107 (1951-12-01), None
patent: 0 520 519 (1992-12-01), None
patent: 01283375 (1989-11-01), None
patent: 01294868 (1989-11-01), None
patent: 4154116 (1992-05-01), None
patent: 11176593 (1999-07-01), None
patent: 479315 (2002-03-01), None
patent: WO 9925895 (1999-05-01), None
patent: WO 00/77831 (2000-12-01), None
Fujino et al., “Dependence of Deposition Characteristics on Base Materials in TEOS and Ozone CVD at Atmospheric Pressure,”J. Electrochem. Soc., 138(2):550-554 (1991).
Kwok et al., “Surface Related Phenomena in Integrated PECVD / Ozone-TEOS SACVD Process for Sub-Half Micron Gap Fill: Electrostatic Eff

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