Plasma reactor and processes using RF inductive coupling and sca

Details Plasma reactor and processes using RF inductive coupling and sca Plasma reactor and processes using RF inductive coupling and sca

1997-09-24

1999-03-30

Nguyen, Nam

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 20419232, 216 58, 216 63, 216 67, 216 70, 216 71, C23F 100

Patent

active

058884149

ABSTRACT:
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

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