Work function adjustment with the implant of lanthanides

Details Work function adjustment with the implant of lanthanides Work function adjustment with the implant of lanthanides

2007-04-20

2010-12-28

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07858459

ABSTRACT:
Semiconductor devices and fabrication methods are provided, in which fully silicided transistor gates are provided for MOS transistors. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.

REFERENCES:
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patent: 6982230 (2006-01-01), Cabral et al.
patent: 7105886 (2006-09-01), Droopad
patent: 2006/0286802 (2006-12-01), Yu et al.
patent: 2007/0218623 (2007-09-01), Chua et al.
patent: 2008/0224239 (2008-09-01), Lin et al.

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