Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2006-11-14
2006-11-14
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S530000, C257SE21337
Reexamination Certificate
active
07135392
ABSTRACT:
A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
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Adams Bruce E.
Jennings Dean
Mayur Abhilash J.
Parihar Vijay
Ranish Joseph M.
Applied Materials Inc.
Booth Richard A.
Law Office of Robert M. Wallace
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