SOI substrate and method of producing the same

Details SOI substrate and method of producing the same SOI substrate and method of producing the same

1995-03-13

1997-08-19

Dang, Trung

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438480, H01L 21265

Patent

active

056588097

ABSTRACT:
A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.

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