Semiconductor junction formation process including low...

Details Semiconductor junction formation process including low... Semiconductor junction formation process including low...

2006-09-19

2006-09-19

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S510000, C438S514000, C438S530000, C438S537000, C438S548000, C257SE21334

Reexamination Certificate

active

07109098

ABSTRACT:
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

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