Semiconductor junction formation process including low...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S510000, C438S514000, C438S530000, C438S537000, C438S548000, C257SE21334

Reexamination Certificate

active

07109098

ABSTRACT:
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

REFERENCES:
patent: 2344138 (1944-03-01), Drummond
patent: 3109100 (1963-10-01), Gecewicz
patent: 3576685 (1971-04-01), Swann et al.
patent: 3907616 (1975-09-01), Wiemer
patent: 4116791 (1978-09-01), Zega
patent: 4382099 (1983-05-01), Legge et al.
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4434036 (1984-02-01), Hoerschelmann et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4521441 (1985-06-01), Flowers
patent: 4539217 (1985-09-01), Farley
patent: 4565588 (1986-01-01), Seki et al.
patent: 4584026 (1986-04-01), Wu et al.
patent: 4698104 (1987-10-01), Barker et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4778561 (1988-10-01), Ghanbari
patent: 4867859 (1989-09-01), Harada et al.
patent: 4871421 (1989-10-01), Ogle et al.
patent: 4892753 (1990-01-01), Weng et al.
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 4948458 (1990-08-01), Ogle
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5061838 (1991-10-01), Lane et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5106827 (1992-04-01), Borden et al.
patent: 5107201 (1992-04-01), Ogle
patent: 5270250 (1993-12-01), Murai et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5288650 (1994-02-01), Sandow
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5312778 (1994-05-01), Collins et al.
patent: 5354381 (1994-10-01), Sheng
patent: 5423945 (1995-06-01), Marks et al.
patent: 5435881 (1995-07-01), Ogle
patent: 5505780 (1996-04-01), Dalvie et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5514603 (1996-05-01), Sato
patent: 5520209 (1996-05-01), Goins et al.
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5561072 (1996-10-01), Saito
patent: 5569363 (1996-10-01), Bayer et al.
patent: 5572038 (1996-11-01), Sheng et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5643838 (1997-07-01), Dean et al.
patent: 5646050 (1997-07-01), Li et al.
patent: 5648701 (1997-07-01), Hooke et al.
patent: 5653811 (1997-08-01), Chan
patent: 5654043 (1997-08-01), Shao et al.
patent: 5660895 (1997-08-01), Lee et al.
patent: 5665640 (1997-09-01), Foster et al.
patent: 5674321 (1997-10-01), Pu et al.
patent: 5683517 (1997-11-01), Shan
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5718798 (1998-02-01), Deregibus
patent: 5770982 (1998-06-01), Moore
patent: 5888413 (1999-03-01), Okumura et al.
patent: 5897752 (1999-04-01), Hong et al.
patent: 5911832 (1999-06-01), Denholm et al.
patent: 5935077 (1999-08-01), Ogle
patent: 5944942 (1999-08-01), Ogle
patent: 5948168 (1999-09-01), Shan et al.
patent: 5985742 (1999-11-01), Henley et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 5994236 (1999-11-01), Ogle
patent: 5998933 (1999-12-01), Shun'ko
patent: 6000360 (1999-12-01), Koshimizu
patent: 6013567 (2000-01-01), Henley et al.
patent: 6020592 (2000-02-01), Liebert et al.
patent: 6041735 (2000-03-01), Murzin et al.
patent: 6050218 (2000-04-01), Chen et al.
patent: 6076483 (2000-06-01), Shintani et al.
patent: 6096661 (2000-08-01), Ngo et al.
patent: 6101971 (2000-08-01), Denholm et al.
patent: 6103599 (2000-08-01), Henley et al.
patent: 6132552 (2000-10-01), Donohoe et al.
patent: 6139697 (2000-10-01), Chen et al.
patent: 6150628 (2000-11-01), Smith et al.
patent: 6153524 (2000-11-01), Henley et al.
patent: 6155090 (2000-12-01), Rubensson
patent: 6164241 (2000-12-01), Chen et al.
patent: 6165376 (2000-12-01), Miyake et al.
patent: 6174450 (2001-01-01), Patrick et al.
patent: 6174743 (2001-01-01), Pangrle et al.
patent: 6182604 (2001-02-01), Goeckner et al.
patent: 6187110 (2001-02-01), Henley et al.
patent: 6207005 (2001-03-01), Henley et al.
patent: 6237527 (2001-05-01), Kellerman et al.
patent: 6239553 (2001-05-01), Barnes et al.
patent: 6248642 (2001-06-01), Donlan et al.
patent: 6265328 (2001-07-01), Henley et al.
patent: 6291313 (2001-09-01), Henley et al.
patent: 6291939 (2001-09-01), Nishida
patent: 6300643 (2001-10-01), Fang et al.
patent: 6303519 (2001-10-01), Hsiao et al.
patent: 6305316 (2001-10-01), DiVergilio et al.
patent: 6335536 (2002-01-01), Goeckner et al.
patent: 6339297 (2002-01-01), Sugai et al.
patent: 6341574 (2002-01-01), Bailey, III et al.
patent: 6348126 (2002-02-01), Hanwa et al.
patent: 6350697 (2002-02-01), Richardson et al.
patent: 6392351 (2002-05-01), Shun'ko
patent: 6403453 (2002-06-01), Ono et al.
patent: 6410449 (2002-06-01), Hanawa et al.
patent: 6417078 (2002-07-01), Dolan et al.
patent: 6418874 (2002-07-01), Cox et al.
patent: 6426015 (2002-07-01), Xia et al.
patent: 6433553 (2002-08-01), Goeckner et al.
patent: 6453842 (2002-09-01), Hanawa et al.
patent: 6461972 (2002-10-01), Kabansky
patent: 6468388 (2002-10-01), Hanawa et al.
patent: 6475888 (2002-11-01), Sohn
patent: 6494986 (2002-12-01), Hanawa et al.
patent: 6511899 (2003-01-01), Henley et al.
patent: 6513538 (2003-02-01), Chung et al.
patent: 6514838 (2003-02-01), Chan
patent: 6528391 (2003-03-01), Henley et al.
patent: 6551446 (2003-04-01), Hanwa et al.
patent: 6559408 (2003-05-01), Smith et al.
patent: 6579805 (2003-06-01), Bar-Gadda
patent: 6582999 (2003-06-01), Henley et al.
patent: 6593173 (2003-07-01), Anc et al.
patent: 6679981 (2004-01-01), Pan et al.
patent: 6800559 (2004-10-01), Bar-Gadda
patent: 6811448 (2004-11-01), Paton et al.
patent: 6838695 (2005-01-01), Doris et al.
patent: 2001/0042827 (2001-11-01), Fang et al.
patent: 2002/0047543 (2002-04-01), Sugai et al.
patent: 2003/0013314 (2003-01-01), Ying et al.
patent: 2003/0196996 (2003-10-01), Jennings et al.
patent: 2004/0200417 (2004-10-01), Hanawa et al.
patent: 2005/0074956 (2005-04-01), Autryve et al.
patent: 2006/0019039 (2006-01-01), Hanawa et al.
patent: 2006/0019477 (2006-01-01), Hanawa et al.
patent: 0 546 852 (1993-06-01), None
patent: 0 836 218 (1998-04-01), None
patent: 0 964 074 (1999-12-01), None
patent: 1 111 084 (2001-06-01), None
patent: 1 191 121 (2002-03-01), None
patent: 59-86214 (1984-05-01), None
patent: 59-218728 (1984-12-01), None
patent: 62-120041 (1987-06-01), None
patent: WO 99/00832 (1999-01-01), None
patent: WO 01/11650 (2001-02-01), None
patent: WO 02/25694 (2002-03-01), None
patent: WO 93/18201 (2003-09-01), None
Van de Ven, Evert P., Connick, I-Wen, and Harrus, Alain S., “Advantages of Dual Frequency PECVD for Deposition of ILD and Passivation Films”,IEEE, Proceedings of VMIC Conference, Jun. 12-13, 1990, pp. 194-201.
Wolf, Stanley and Taubner, Richard, “Silicon Processing for the VLSI Era”, 2000, Lattice Press, Viol. 1, pp. 303-308.
Zhang, B.C., and Cross, R.C., “A high power radio frequency transformer for plasma production,”Rev. Sci. Instrum., vol. 69, No. 1, pp. 101-108, Jan. 1998.
U.S. Appl. No. 09/638,075, filed Aug. 11, 2000, entitled, “Externally Excited Torroidal Plasma Source,” By Hanwa, et al.
U.S. Appl. No. 10/929,104, Buchberger, Jr. et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor junction formation process including low... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor junction formation process including low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor junction formation process including low... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3559042

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.