Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2011-08-02
2011-08-02
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S542000, C438S557000, C438S564000, C438S568000, C257S375000, C257S486000, C257S751000, C257SE21056, C257SE21135
Reexamination Certificate
active
07989329
ABSTRACT:
A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
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International Search Report and Written Opinion of the International Searching Authority mailed May 28, 2009 in PCT/US2008/087446.
Collins Kenneth S.
Foad Majeed A.
Gallo Biagio
Hanawa Hiroji
Hilkene Martin A.
Applied Materials Inc.
Kim Su C
Patterson & Sheridan L.L.P.
Smith Matthew
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