Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-21
2011-06-21
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S780000, C430S270110, C430S311000, C257SE21257
Reexamination Certificate
active
07964503
ABSTRACT:
The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.
REFERENCES:
patent: 4578344 (1986-03-01), Griffing et al.
patent: 4663275 (1987-05-01), West et al.
patent: 4677049 (1987-06-01), Griffing et al.
patent: 4812418 (1989-03-01), Pfiester et al.
patent: 4977048 (1990-12-01), Waldo, III
patent: 4990665 (1991-02-01), Griffing et al.
patent: 5002993 (1991-03-01), West et al.
patent: 5024919 (1991-06-01), Yamauchi
patent: 5106723 (1992-04-01), West et al.
patent: 5108874 (1992-04-01), Griffing et al.
patent: 5196295 (1993-03-01), Davis
patent: 6294317 (2001-09-01), Calistri-Yeh et al.
patent: 6682949 (2004-01-01), Ukita
patent: 6864039 (2005-03-01), Cheng et al.
patent: 6864152 (2005-03-01), Mirbedini et al.
patent: 6882416 (2005-04-01), Hunter et al.
patent: 7012684 (2006-03-01), Hunter
patent: 7432197 (2008-10-01), Bissey et al.
patent: 2002/0142561 (2002-10-01), Stanton et al.
patent: 2004/0091789 (2004-05-01), Han et al.
patent: 2004/0233537 (2004-11-01), Agrawal et al.
patent: 2005/0123839 (2005-06-01), Kim et al.
patent: 2007/0092829 (2007-04-01), Noelscher et al.
patent: 2007/0105043 (2007-05-01), Elian et al.
ShinMicroSi, Inc., “Shin-EtsuMicroSi Contrast Enhancement Materials” pp. 1-7 Product Brochure for CEM 365HR; dated prior to Jan. 27, 2006.
Shane Geary et al.; “Contrast Enhancement Materials for Yield Improvement in Submicron I-line Lithography” 10 pages; dated prior to Jan. 27, 2006.
Bissey Lucien J.
Stanton William A.
Ghyka Alexander G
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Methods of patterning photoresist, and methods of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of patterning photoresist, and methods of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of patterning photoresist, and methods of forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2715120