Removal of process residues on the backside of a substrate

Details Removal of process residues on the backside of a substrate Removal of process residues on the backside of a substrate

2007-04-03

2011-12-27

Olsen, Allan (Department: 1716)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C134S001200, C134S021000, C134S032000, C438S707000, C438S716000, C438S725000

Reexamination Certificate

active

08083963

ABSTRACT:
A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.

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