Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2003-09-12
2009-12-08
McDonald, Rodney G (Department: 1795)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192320, C427S255280, C427S255370, C427S255290, C438S694000, C438S696000, C438S703000, C438S706000, C438S707000, C438S710000, C438S723000
Reexamination Certificate
active
07628897
ABSTRACT:
A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
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Kapoor Bikram
Mungekar Hemant P.
Patel Anjana M.
Vellaikal Manoj
Wang Anchuan
Applied Materials Inc.
McDonald Rodney G
Townsend and Townsend and Crew
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