Projection type X-ray lithography apparatus

Details Projection type X-ray lithography apparatus Projection type X-ray lithography apparatus

1992-09-15

1994-04-19

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 84, 378161, G21K 500

Patent

active

053053648

ABSTRACT:
Reduction projection type X-ray lithography with an exposing beam wavelength of 40-150A, longer than in conventional 1:1 proximity exposure, has a high-vacuum space. This would reduce wafer replacement work efficiency and contaminate optical mirrors with substances released by a resist decomposed during exposure except for separating an optical system chamber and a wafer exposing chamber by a differential pumping section and a thin-film window. Wafer exposure is under atmospheric pressure, improving productivity, accuracy of exposure and longevity of the optical devices.

REFERENCES:
patent: 4539695 (1985-04-01), La Fiandra
patent: 4862490 (1989-08-01), Karnezos et al.
patent: 5003567 (1991-03-01), Hawryluk et al.
patent: 5063586 (1991-11-01), Jewell et al.
patent: 5153898 (1992-10-01), Suzuki et al.
patent: 5173612 (1992-12-01), Imai et al.
NTIS Tech Notes No. 7B, Jul. 1985, Springfield, VA US, p. 760 "Advanced X-Ray Lithography for IC Production".
Proceedings of SPIE, vol. 448, 1984, Bellingham, Wash., US, pp. 50-59, Silverman et al, "Synchrotron radiation X-ray lithography: recent results".
Nuclear Instruments & Methods in Physics Research: Section A, vol. A246, No. 1/3, May 1986, Amsterdam, NL, pp. 658-667, Betz, "High Resolution Lithography Using Synchrotron Radiation".
Nuclear Instruments and Methods, vol. 172, 1980, Amsterdam, NL, pp. 387-391, Warburton, "Soft X-Ray Microscopy/Lithography Branch Line At SSRL".
Technical Digest Series, WD2-1, "Soft X-ray Reduction Lithography Using a Reflection Mask", H. Kinoshita et al, 1991, pp. 57-59.
Technical Digest Series, WD2-1, "Soft X-ray Reduction Lithography Using a Reflection Mask", H. Kinoshita et al, 1991, pp. 57-59.

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