Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-07-05
2011-07-05
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S694000, C257SE21257, C257SE21576
Reexamination Certificate
active
07972965
ABSTRACT:
The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, indents, holes, trenches, and/or the like. Roughing on the interface may be achieved by depositing a material on a surface of the substrate to act as a mask and then using an etching process to induce the roughness. The material, acting as a mask, allows etching to occur on a fine, or sub-miniature, scale below the Scale achieved with a conventional photo mask and lithography to achieve the required pattern roughing. Another material is then deposited on the roughened surface of the substrate, filling in the roughing and adhering to the substrate.
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Applied Physics Letters, vol. 79, No. 3, (Jul. 16, 2001).
Colburn Matthew E.
Cooney, III Edward C.
McGahay Vincent
Shaw Thomas M.
Stamper Anthony K.
Brown Katherine S.
International Business Machines - Corporation
Roberts Mlotkowski Safran & Cole P.C.
Stark Jarrett J
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