Plasma immersed ion implantation process using balanced...

Details Plasma immersed ion implantation process using balanced... Plasma immersed ion implantation process using balanced...

2007-05-15

2010-11-23

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C257SE21328

Reexamination Certificate

active

07838399

ABSTRACT:
Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

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International Search Report and Written Opinion for PCT/US 07/86848, dated Apr. 30, 2008.

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