Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2006-05-10
2009-10-20
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S795000, C216S062000, C156S345410
Reexamination Certificate
active
07605063
ABSTRACT:
Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
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International Search Report and Written Opinion dated Aug. 12, 2008 for PCT/US07/10115.
Chebi Robert P.
Lo Gladys S.
Miller Alan J.
Winniczek Jaroslaw W.
Buchanan & Ingersoll & Rooney PC
Coleman W. David
Lam Research Corporation
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