Multiple frequency plasma chamber with grounding capacitor...

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

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C118S7230AN, C156S345430, C156S345440

Reexamination Certificate

active

06857387

ABSTRACT:
An apparatus and method for fabricating an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. At least one capacitor is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF power to any plasma outside the region directly between the two electrodes. Consequently, the invention can improve the performance of the plasma process by concentrating more of the RF power in the region between the two electrodes.

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