MOS devices with continuous contact etch stop layer

Details MOS devices with continuous contact etch stop layer MOS devices with continuous contact etch stop layer

2006-10-18

2010-06-08

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29161

Reexamination Certificate

active

07732878

ABSTRACT:
A semiconductor structure includes a substrate, a gate stack on the substrate, a source/drain region adjacent the gate stack, a source/drain silicide region on the source/drain region, a protection layer on the source/drain silicide region, wherein a region over the gate stack is substantially free from the protection layer, and a contact etch stop layer (CESL) having a stress over the protection layer and extending over the gate stack.

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patent: 2006/0249794 (2006-11-01), Teh et al.
patent: 2007/0023845 (2007-02-01), Ohta
patent: 1905209 (2007-01-01), None
patent: 1941409 (2007-04-01), None

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