MIM capacitor and method of fabricating same

Details MIM capacitor and method of fabricating same MIM capacitor and method of fabricating same

2007-05-29

2007-05-29

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S396000, C438S399000, C257SE21008

Reexamination Certificate

active

11106887

ABSTRACT:
A damascene MIM capacitor and a method of fabricating the MIM capacitor. The MIN capacitor includes a dielectric layer having top and bottom surfaces; a trench in the dielectric layer, the trench extending from the top surface to the bottom surface of the dielectric layer; a first plate of a MIM capacitor comprising a conformal conductive liner formed on all sidewalls and extending along a bottom of the trench, the bottom of the trench coplanar with the bottom surface of the dielectric layer; an insulating layer formed over a top surface of the conformal conductive liner; and a second plate of the MIM capacitor comprising a core conductor in direct physical contact with the insulating layer, the core conductor filling spaces in the trench not filled by the conformal conductive liner and the insulating layer. The method includes forming portions of the MIM capacitor simultaneously with damascene interconnection wires.

REFERENCES:
patent: 5675184 (1997-10-01), Matsubayashi et al.
patent: 5879985 (1999-03-01), Gambino et al.
patent: 6028362 (2000-02-01), Omura
patent: 6329234 (2001-12-01), Ma et al.
patent: 6452251 (2002-09-01), Bernstein et al.
patent: 6461914 (2002-10-01), Roberts et al.
patent: 6670237 (2003-12-01), Loh et al.
patent: 6764915 (2004-07-01), Lee

Affiliated with

Also associated with

Rating

MIM capacitor and method of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIM capacitor and method of fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIM capacitor and method of fabricating same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3799054