Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2006-12-12
2006-12-12
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S050000, C257S419000, C073S861470, C073S715000
Reexamination Certificate
active
07148077
ABSTRACT:
A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.
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Fischer Frank
Fuertsch Matthias
Metzger Lars
Pinter Stefan
Schelling Christoph
Fulk Steven J.
Smith Bradley K.
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