Method using TEOS ramp-up during TEOS/ozone CVD for improved...

Details Method using TEOS ramp-up during TEOS/ozone CVD for improved... Method using TEOS ramp-up during TEOS/ozone CVD for improved...

2007-04-24

2007-04-24

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S790000, C438S778000, C438S787000, C438S958000

Reexamination Certificate

active

11367866

ABSTRACT:
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

REFERENCES:
patent: 6099647 (2000-08-01), Yieh et al.
patent: 6133160 (2000-10-01), Komiyama et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6319849 (2001-11-01), Oda et al.
patent: 6583069 (2003-06-01), Vassiliev et al.
patent: 6617259 (2003-09-01), Jung et al.

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