Method providing an improved bi-layer photoresist pattern

Details Method providing an improved bi-layer photoresist pattern Method providing an improved bi-layer photoresist pattern

2006-05-23

2006-05-23

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S313000, C430S316000, C430S317000, C430S322000, C216S041000, C216S072000, C216S079000

Reexamination Certificate

active

07049052

ABSTRACT:
A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.

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