Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-01
2010-06-08
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S200000
Reexamination Certificate
active
07732269
ABSTRACT:
A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
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Cho Yonah
Foad Majeed A.
Kim Yihwan
Sanchez Errol
Ye Zhiyuan
Applied Materials Inc.
Ida Geoffrey
Le Thao X
Patterson & Sheridan
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