Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-11-14

2006-11-14

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S795000

Reexamination Certificate

active

07135407

ABSTRACT:
In a method of manufacturing a semiconductor device, a tungsten layer pattern having an oxidized surface is formed on a substrate. A source gas including silicon is provided to the oxidized surface of the tungsten layer pattern to form a protecting layer on the oxidized surface of the tungsten layer pattern. The protecting layer prevents an abnormal growth of oxide contained in the oxidized surface. The protecting layer prevents a whisker from growing from the oxidized surface of the tungsten layer pattern.

REFERENCES:
patent: 5084417 (1992-01-01), Joshi et al.
patent: 6022586 (2000-02-01), Hashimoto et al.
patent: 6214731 (2001-04-01), Nogami et al.
patent: 2002/0098648 (2002-07-01), Ludwig et al.
patent: 2004/0132265 (2004-07-01), Maruyama et al.

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