Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-11-28

2006-11-28

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S204000, C365S207000

Reexamination Certificate

active

07142457

ABSTRACT:
A memory device in accordance with embodiments of the present invention includes a reference cell array and a plurality of banks. Each of the banks includes memory cells. A plurality of current copier circuits corresponds to the banks, respectively. Each of the current copier circuits copies a reference current flowing through a reference cell array to generate a reference voltage. A plurality of sense blocks correspond to the banks, respectively. Each of the sense blocks includes a plurality of sense amplifiers for sensing data from a corresponding bank in response to the reference voltage from the corresponding current copier circuit. Memory cell lay-out area is reduced, and sense speed is increased.

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