Method of making a sidewall-protected metallic pillar on a...

Details Method of making a sidewall-protected metallic pillar on a... Method of making a sidewall-protected metallic pillar on a...

2008-08-12

2010-12-21

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S622000

Reexamination Certificate

active

07855137

ABSTRACT:
A method of forming conductive pillars on a semiconductor wafer in which the conductive pillars are plated with a protecting coating of Ni, Co, Cr, Rh, NiP, NiB , CoWP, or CoP. Only the side of the conductive pillars are plated. The ends of the conductive pillars are free of the protective plating so that the conductive pillars can be readily joined to the pads of a packaging substrate. Also disclosed is a sidewall-protected conductive pillar having a protective coating of Ni, Co, Cr, Rh, NiP, NiB , CoWP, or CoP thereon.

REFERENCES:
patent: 6177636 (2001-01-01), Fjelstad
patent: 6348734 (2002-02-01), Brown
patent: 6368951 (2002-04-01), Higashi et al.
patent: 6818545 (2004-11-01), Lee et al.
patent: 6893961 (2005-05-01), Akram
patent: 7135770 (2006-11-01), Nishiyama et al.
patent: 2004/0007779 (2004-01-01), Arbuthnot et al.
patent: 2005/0017376 (2005-01-01), Tsai

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