Method of depositing a TaN seed layer

Details Method of depositing a TaN seed layer Method of depositing a TaN seed layer

2005-06-28

2005-06-28

Versteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192130, C427S569000

Reexamination Certificate

active

06911124

ABSTRACT:
We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaNseed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaNseed layer. Further, the TaNseed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaNseed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaNseed layer.

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