Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-19
2011-04-19
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S283000, C438S585000, C257SE21434, C257SE21444
Reexamination Certificate
active
07927943
ABSTRACT:
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming first and second transistors in the substrate, the first transistor having a first gate structure that includes a first dummy gate, the second transistor having a second gate structure that includes a second dummy gate, removing the first and second dummy gates thereby forming a first trench and a second trench, respectively, forming a first metal layer to partially fill in the first and second trenches, removing the first metal layer within the first trench, forming a second metal layer to partially fill in the first and second trenches, forming a third metal layer to partially fill in the first and second trenches, reflowing the second metal layer and the third metal layer, and forming a fourth metal layer to fill in the remainder of the first and second trenches.
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Chinese Patent Office, Office Action dated Oct. 11, 2010, Application No. 200910169148.7, 5 pages.
Chuang Harry
Chung Sheng-Chen
Thei Kong-Beng
Yeh Chiung-Han
Haynes and Boone LLP
Kebede Brook
Taiwan Semiconductor Manufacturing Company , Ltd.
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