Method for producing semiconductor substrate, method for...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10536445

ABSTRACT:
In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradient composition layer of which a Ge composition ratio is gradually increased from a Ge composition ratio of a base material and a process of epitaxially growing a SiGe constant-composition layer on the gradient composition layer at a final Ge composition ratio of the gradient composition layer, thereby depositing a SiGe layer of which a Ge composition ratio changes in a film deposition direction, in a step-like manner with a gradient, a heat treatment step of performing heat treatment at a temperature exceeding a temperature of the epitaxial growth either during or after formation of the SiGe layer, and a polishing step of polishing to remove irregularities on a surface of the SiGe layer which arise in the heat treatment after formation of the SiGe layer are included.

REFERENCES:
patent: 5221413 (1993-06-01), Brasen et al.
patent: 5442205 (1995-08-01), Brasen et al.
patent: 6690043 (2004-02-01), Usuda et al.
patent: 2002/0017642 (2002-02-01), Mizushima et al.
patent: 1336684 (2002-02-01), None
patent: 10137369 (2002-04-01), None
patent: 06-252046 (1994-09-01), None
patent: 9-321307 (1997-12-01), None
patent: 2002-118254 (2002-04-01), None
patent: 2002-289533 (2002-10-01), None
patent: 2003-158075 (2003-05-01), None
patent: 2002-011338 (2002-02-01), None
patent: WO 98/00857 (1998-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing semiconductor substrate, method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor substrate, method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor substrate, method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3798456

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.