Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-03
2007-04-03
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
10536445
ABSTRACT:
In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradient composition layer of which a Ge composition ratio is gradually increased from a Ge composition ratio of a base material and a process of epitaxially growing a SiGe constant-composition layer on the gradient composition layer at a final Ge composition ratio of the gradient composition layer, thereby depositing a SiGe layer of which a Ge composition ratio changes in a film deposition direction, in a step-like manner with a gradient, a heat treatment step of performing heat treatment at a temperature exceeding a temperature of the epitaxial growth either during or after formation of the SiGe layer, and a polishing step of polishing to remove irregularities on a surface of the SiGe layer which arise in the heat treatment after formation of the SiGe layer are included.
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Kougami Hazumu
Ninomiya Masaharu
Shiono Ichiro
Harrison Monica D.
Jr. Carl Whitehead
Pillsbury Winthrop Shaw & Pittman LLP
Sumitomo Mitsubishi Silicon Corporation
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