4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Masaharu Ninomiya

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Method for manufacturing semiconductor silicon epitaxial...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for producing semiconductor substrate, method for...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Method for producing strained Si-SOI substrate and strained...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
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Semiconductor substrate and field-effect transistor, and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Silicon epitaxial wafer manufacturing method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Profile ID: LFUS-PAI-P-2013802

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