Method for measuring dopant concentration during plasma ion...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S007000, C438S547000, C257SE21528

Reexamination Certificate

active

07977199

ABSTRACT:
Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.

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PCT International Search Report and Written Opinion dated Mar. 5, 2010 for International Application No. PCT/US2009/034995.
Sobolewski “Measuring the Ion Current in High-Density Plasmas Using Radio-Frequency Current and Voltage Measurements.” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2660-2671.

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