Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-04-24
2008-12-16
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S637000, C438S778000, C257SE21159, C257SE21160, C257SE21477, C257S774000, C257S760000
Reexamination Certificate
active
07465676
ABSTRACT:
A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.
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Bao Tien-I
Chen I-I
Jeng Shwang-Ming
Lin Chih-Lung
Tsai Fang Wen
Everhart Caridad M
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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