Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-02-27
2007-02-27
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S682000
Reexamination Certificate
active
10669898
ABSTRACT:
A method of fabricating complementary metal oxide semiconductor (CMOS) field effect transistors which includes selective doping and full silicidation of a polysilicon material comprising the gate electrode of the transistor. In one embodiment, prior to silicidation, the polysilicon is amorphized. In a further embodiment, siliciding is performed at a low substrate temperature.
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Cabral, Jr. Cyril
Ieong Meikei
Kedzierski Jakub T.
International Business Machines - Corporation
Patterson & Sheridan LLP
Smith Bradley K.
Tong, Esq. Kin-Wah
Tuchman, Esq. Ido
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