4. Metal treatment
  5. Barrier layer stock material, p-n type
  6. With recess, void, dislocation, grain boundaries or channel...

Cyril Cabral, Jr.

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Atomic layer deposition metallic contacts, gates and...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate

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Atomic layer deposition of metallic contacts, gates and...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate

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Capping layer for improved silicide formation in narrow...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Changing an electrical resistance of a resistor

Electrical resistors – Mechanically variable – Resistance value varied by removing or adding material
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CMOS silicide metal gate integration

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
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Profile ID: LFUS-PAI-P-484936

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