Memory test circuit and test system

Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing

Reexamination Certificate

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Details

C714S030000, C714S719000, C714S733000, C365S201000

Reexamination Certificate

active

10994140

ABSTRACT:
A memory test circuit comprises a memory which outputs stored data through n-bit data output pins, and a built-in self test (BIST) unit. The BIST unit writes test data in the memory, and by comparing the test data output from the memory with expected data, determines a failure cell address in the memory. The BIST unit generates k preliminary failure signals having failure information indicating whether the test data correspond with the expected data, and outputs the k preliminary failure signals for m cycles of a clock signal, by outputting k/m preliminary failure signals each cycle as first through k/m failure signals. In the memory test circuit and test system, the BIST unit testing a memory and generating a failure signal is disposed in a memory apparatus and a failure analysis circuit analyzing a failure signal output by the BIST unit is disposed in the test apparatus.

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