Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing
Reexamination Certificate
2007-07-03
2007-07-03
Lamarre, Guy (Department: 2138)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Memory testing
C714S030000, C714S719000, C714S733000, C365S201000
Reexamination Certificate
active
10994140
ABSTRACT:
A memory test circuit comprises a memory which outputs stored data through n-bit data output pins, and a built-in self test (BIST) unit. The BIST unit writes test data in the memory, and by comparing the test data output from the memory with expected data, determines a failure cell address in the memory. The BIST unit generates k preliminary failure signals having failure information indicating whether the test data correspond with the expected data, and outputs the k preliminary failure signals for m cycles of a clock signal, by outputting k/m preliminary failure signals each cycle as first through k/m failure signals. In the memory test circuit and test system, the BIST unit testing a memory and generating a failure signal is disposed in a memory apparatus and a failure analysis circuit analyzing a failure signal output by the BIST unit is disposed in the test apparatus.
REFERENCES:
patent: 5910921 (1999-06-01), Beffa et al.
patent: 5912901 (1999-06-01), Adams et al.
patent: 5987632 (1999-11-01), Irrinki et al.
patent: 6085346 (2000-07-01), Lepejian et al.
patent: 6108252 (2000-08-01), Park
patent: 6163863 (2000-12-01), Schicht
patent: 6310807 (2001-10-01), Ooishi et al.
patent: 6408401 (2002-06-01), Bhavsar et al.
patent: 6421794 (2002-07-01), Chen et al.
patent: 6574763 (2003-06-01), Bertin et al.
patent: 6937531 (2005-08-01), Frankowsky
patent: 7013413 (2006-03-01), Kim et al.
patent: 2003/0014702 (2003-01-01), Finteis
patent: 2003/0177415 (2003-09-01), Togashi et al.
patent: 2005/0030822 (2005-02-01), Beer
patent: 2000-011691 (2000-01-01), None
patent: 2002-117697 (2002-04-01), None
patent: 01-27673 (2001-04-01), None
Jeon Soon-keun
Jun Bae-sun
Kim Han
Kim Yong-cheul
Lamarre Guy
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Trimmings John P.
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