Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-21
2007-08-21
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S783000, C438S786000, C438S778000, C257SE21277, C257SE21278
Reexamination Certificate
active
11142124
ABSTRACT:
A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.
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Balasubramanian Ganesh
Cui Zhenjiang
Kim Bok Hoen
Lakshmanan Annamalai
M'Saad Hichem
Applied Materials Inc.
Jefferson Quovaunda
Patterson & Sheridan
Toledo Fernando L.
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