Interface engineering to improve adhesion between low k stacks

Details Interface engineering to improve adhesion between low k stacks Interface engineering to improve adhesion between low k stacks

2007-08-21

2007-08-21

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000, C438S786000, C438S778000, C257SE21277, C257SE21278

Reexamination Certificate

active

11142124

ABSTRACT:
A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

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