Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1996-05-13
2000-12-26
McDonald, Rodney
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723E, 118723I, 118723IR, 118723AN, 216 67, 216 68, 20419232, 20429831, 20429834, C23F 102
Patent
active
06165311&
ABSTRACT:
The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.
REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4261762 (1981-04-01), King
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4427762 (1984-01-01), Takahashi et al.
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4457359 (1984-07-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4755345 (1988-07-01), Balty et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4786359 (1988-11-01), Stark et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 4807016 (1989-02-01), Douglas
patent: 4810935 (1989-03-01), Boswell
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4870245 (1989-09-01), Price et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4948750 (1990-08-01), Kausche et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5085727 (1992-02-01), Steger
patent: 5169487 (1992-12-01), Langley et al.
patent: 5187454 (1993-02-01), Collins et al.
patent: 5203956 (1993-04-01), Hansen
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5249251 (1993-09-01), Egalon et al.
patent: 5258824 (1993-11-01), Carlson et al.
patent: 5276693 (1994-01-01), Long et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5326404 (1994-07-01), Sato
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5349313 (1994-09-01), Collins et al.
patent: 5392018 (1995-02-01), Collins et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5414246 (1995-05-01), Shapona
patent: 5423945 (1995-06-01), Marks et al.
patent: 5435881 (1995-07-01), Ogle
patent: 5477975 (1995-12-01), Rice et al.
patent: 5514246 (1996-05-01), Blalock
patent: 5529657 (1996-06-01), Ishii
patent: 5556501 (1996-09-01), Collins et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5637961 (1997-06-01), Ishii et al.
patent: 5683548 (1997-11-01), Hartig et al.
patent: 5753044 (1998-05-01), Hanawa et al.
patent: 5938883 (1999-08-01), Ishii et al.
patent: 5944942 (1999-08-01), Ogle
Patent Abstracts of Japan--JP06-196446, Jul. 1994.
Patent Abstract of Japan, Jul. 1994.
Patent Abstracts of Japan, vol. 096, No. 002, Feb. 29, 1996 & JP 07 288196 A (Tokyo Electron Ltd), Oct. 31, 1995.
Patent Abstracts of Japan, vol. 018, No .545 (E-1617), Oct. 18, 1994 & JP 06 196446 A (NEC Corp), Jul. 15, 1994.
Patent Abstracts of Japan, vol. 096, No. 005, May 31, 1996 (JP 08 017799 A (Plasma Syst: KK), Jan. 19, 1996.
Coburn, W.J. "Increasing the Etch Rate Ratio oSiO.sub.2 /Si in Fluorocarbon Plasma Etching", IBM Technical Disclosure, vol. 19, No. 10, Mar. 1977.
Matsuo, Seitaro. "Selective etching of SiO.sub.2 relative to Si by plasma reactive sputter etching", J. Vac. Sc. Technology, vol. 17, No. 2, Mar.-Apr. 1980.
European Patent Office Communication pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-2208, mailed Jan. 17, 1996.
Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd).
Patent Abstracts of Japan, Publication No. 62052714 A, Mar. 7, 1987 (Olympus Optical Co Ltd; Taogosei Chem Ind Co Ltd).
Buchberger Douglas
Collins Kenneth S.
Rice Michael
Roderick Craig A.
Trow John
Applied Materials Inc.
McDonald Rodney
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