Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2004-12-20
2008-11-25
Richards, N Drew (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S789000, C438S790000, C257SE21273, C257SE21279
Reexamination Certificate
active
07456116
ABSTRACT:
A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
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Kwok et al., “Surface Related Phenomena in Integrated PECVD / Ozone-TEOS SACVD Process for Sub-Half Micron Gap Fill: Electrostatic Eff
Bang Won B.
Banthia Vikash
Ingle Nitin K.
Wang Yen-Kun V.
Wong Shan
Applied Materials Inc.
Lee Kyoung
Richards N Drew
Townsend and Towsend and Crew LLP
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