Film formation method and apparatus for semiconductor process

Details Film formation method and apparatus for semiconductor process Film formation method and apparatus for semiconductor process

2007-09-25

2007-09-25

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257SE21092, C257SE21102, C438S483000

Reexamination Certificate

active

10965819

ABSTRACT:
In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

REFERENCES:
patent: 5851904 (1998-12-01), Schwarz et al.
patent: 6562736 (2003-05-01), Yanagawa et al.
patent: 2004/0058482 (2004-03-01), Yoshida et al.
patent: 2002-305256 (2002-10-01), None
patent: 2003-77845 (2003-03-01), None

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