Deposition process for high aspect ratio trenches

Details Deposition process for high aspect ratio trenches Deposition process for high aspect ratio trenches

2006-08-29

2006-08-29

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S576000, C427S099300

Reexamination Certificate

active

07097886

ABSTRACT:
A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

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